AOLF66412
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOLF66412
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 375
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 352
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 85
nC
trⓘ - Rise Time: 3.3
nS
Cossⓘ -
Output Capacitance: 1100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0015
Ohm
Package: LFPAK5X6-4L
AOLF66412
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOLF66412
Datasheet (PDF)
..1. Size:436K aosemi
aolf66412.pdf
AOLF66412TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 352A Low RDS(ON) RDS(ON) (at VGS=10V)
6.1. Size:421K aosemi
aolf66413.pdf
AOLF66413TM 40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 357A Low RDS(ON) RDS(ON) (at VGS=10V)
6.2. Size:432K aosemi
aolf66417.pdf
AOLF66417TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 200A Low RDS(ON) RDS(ON) (at VGS=10V)
8.1. Size:614K aosemi
aolf66610.pdf
AOLF66610TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 294A Low RDS(ON) RDS(ON) (at VGS=10V)
8.2. Size:443K aosemi
aolf66910.pdf
AOLF66910TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 187A Low RDS(ON) RDS(ON) (at VGS=10V)
Datasheet: WPB4002
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