All MOSFET. AOSS21319C Datasheet

 

AOSS21319C Datasheet and Replacement


   Type Designator: AOSS21319C
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT23
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AOSS21319C Datasheet (PDF)

 ..1. Size:349K  aosemi
 aoss21319c.pdf pdf_icon

AOSS21319C

AOSS21319C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -2.8A Low Gate Charge RDS(ON) (at VGS=-10V)

 6.1. Size:383K  aosemi
 aoss21311c.pdf pdf_icon

AOSS21319C

AOSS21311C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -4.3A Low Gate Charge RDS(ON) (at VGS=-10V)

 7.1. Size:322K  aosemi
 aoss21329.pdf pdf_icon

AOSS21319C

AOSS2132930V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -2.8A Low Gate Charge RDS(ON) (at VGS=-10V)

 8.1. Size:291K  aosemi
 aoss21115c.pdf pdf_icon

AOSS21319C

AOSS21115C20V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -4.5A Low Gate Charge RDS(ON) (at VGS=-4.5V)

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