FQPF2N80 PDF and Equivalents Search

 ..1. Size:619K  fairchild semi
 fqpf2n80.pdf

September 2000 TM QFET FQPF2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.5A, 800V, RDS(on) = 6.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tail... See More ⇒

 0.1. Size:966K  fairchild semi
 fqpf2n80ydtu.pdf

July 2013 FQPF2N80YDTU N-Channel QFET MOSFET 8 0 V, 1.5 A, Features Description This N-Channel enhancement mode power MOSFET is 1.5 A, 8 0 V, RDS(on)= (Max.)@VGS=10 V, ID=0.75 A produced using Fairchild Semiconductor s proprietary Low Gate Charge (Typ. 12 nC) planar stripe and DMOS technology. This advanced Low Crss (Typ. 5.5 pF) MOSFET technolog... See More ⇒

 0.2. Size:1344K  onsemi
 fqpf2n80ydtu.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.1. Size:732K  fairchild semi
 fqpf2n30.pdf

May 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.34A, 300V, RDS(on) = 3.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 3.7 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been ... See More ⇒

 8.2. Size:726K  fairchild semi
 fqpf2n90.pdf

April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.4A, 900V, RDS(on) = 7.2 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has be... See More ⇒

 8.3. Size:1366K  fairchild semi
 fqp2n60c fqpf2n60c.pdf

April 2006 QFET FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect rDS(on) = 4.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge (typical 8.5 nC) planar stripe, DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tailo... See More ⇒

 8.4. Size:561K  fairchild semi
 fqpf2n60.pdf

April 2000 TM QFET QFET QFET QFET FQPF2N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.6A, 600V, RDS(on) = 4.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been ... See More ⇒

 8.5. Size:622K  fairchild semi
 fqpf2n70.pdf

TM QFET FQPF2N70 700V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 700V, RDS(on) = 6.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been especially tailored to Fa... See More ⇒

 8.6. Size:677K  fairchild semi
 fqpf2na90.pdf

September 2000 TM QFET QFET QFET QFET FQPF2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 900V, RDS(on) = 5.8 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has... See More ⇒

 8.7. Size:725K  fairchild semi
 fqpf2n40.pdf

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.1A, 400V, RDS(on) = 5.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has bee... See More ⇒

 8.8. Size:711K  fairchild semi
 fqpf2n50.pdf

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.3A, 500V, RDS(on) = 5.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.0 pF) This advanced technology has bee... See More ⇒

 8.9. Size:1596K  onsemi
 fqp2n60c fqpf2n60c.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒