AOT190A60CL Specs and Replacement

Type Designator: AOT190A60CL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO220

AOT190A60CL substitution

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AOT190A60CL datasheet

 ..1. Size:484K  aosemi
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AOT190A60CL

AOTF190A60CL/AOT190A60CL/AOB190A60CL TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 ..2. Size:484K  aosemi
aotf190a60cl aot190a60cl aob190a60cl.pdf pdf_icon

AOT190A60CL

AOTF190A60CL/AOT190A60CL/AOB190A60CL TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 5.1. Size:743K  aosemi
aot190a60l.pdf pdf_icon

AOT190A60CL

AOB190A60L/AOT190A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

Detailed specifications: AOSS32334C, AOSS32338C, AO3160E, AOT080A60L, AOT095A60FDL, AOT095A60L, AOT125A60L, AOT160A60L, IRFB7545, AOT190A60L, AOT280A60L, AOT29S50L, AOT360A70L, AOT380A60CL, AOT380A60L, AOT450A70L, AOT600A60L

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.