AOT66916L Specs and Replacement
Type Designator: AOT66916L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 277 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 1660 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: TO220
AOT66916L substitution
- MOSFET ⓘ Cross-Reference Search
AOT66916L datasheet
aot66916l aob66916l.pdf
AOT66916L/AOB66916L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Best in class on-resistance RDS(ON) Lowers switching loss by lower Qrr than other MOSFET RDS(ON) (at VGS=10V) ... See More ⇒
aot66916l.pdf
AOT66916L/AOB66916L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Best in class on-resistance RDS(ON) Lowers switching loss by lower Qrr than other MOSFET RDS(ON) (at VGS=10V) ... See More ⇒
aot66919l.pdf
AOT66919L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aot66914l aob66914l.pdf
AOT66914L/AOB66914L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Extremely Low RDS(ON) Optimized switching performance RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOT600A70FL, AOT600A70L, AOT66518L, AOT66613, AOT66616L, AOT66620L, AOT66811L, AOT66914L, IRF540N, AOT66918L, AOT66919L, AOT66920L, AOT780A70L, AOTF080A60L, AOTF095A60FDL, AOTF095A60L, AOTF125A60FDL
Keywords - AOT66916L MOSFET specs
AOT66916L cross reference
AOT66916L equivalent finder
AOT66916L pdf lookup
AOT66916L substitution
AOT66916L replacement
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