AOT66916L Datasheet and Replacement
Type Designator: AOT66916L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 277 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 1660 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: TO220
AOT66916L Datasheet (PDF)
aot66916l.pdf

AOT66916L/AOB66916LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Best in class on-resistance RDS(ON) Lowers switching loss by lower Qrr than other MOSFET RDS(ON) (at VGS=10V)
aot66919l.pdf

AOT66919LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aot66914l.pdf

AOT66914L/AOB66914LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Extremely Low RDS(ON) Optimized switching performance RDS(ON) (at VGS=10V)
aot66918l.pdf

AOT66918LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Combined of low RDS(ON) and wide safe operatiing area (SOA) RDS(ON) (at VGS=10V)
Datasheet: AOT600A70FL , AOT600A70L , AOT66518L , AOT66613 , AOT66616L , AOT66620L , AOT66811L , AOT66914L , IRF540 , AOT66918L , AOT66919L , AOT66920L , AOT780A70L , AOTF080A60L , AOTF095A60FDL , AOTF095A60L , AOTF125A60FDL .
History: PA607UA
Keywords - AOT66916L MOSFET datasheet
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History: PA607UA



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