All MOSFET. AOT66919L Datasheet

 

AOT66919L Datasheet and Replacement


   Type Designator: AOT66919L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6 V
   |Id| ⓘ - Maximum Drain Current: 105 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 47 nC
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: TO220
 

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AOT66919L Datasheet (PDF)

 ..1. Size:370K  aosemi
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AOT66919L

AOT66919LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 7.1. Size:409K  aosemi
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AOT66919L

AOT66914L/AOB66914LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Extremely Low RDS(ON) Optimized switching performance RDS(ON) (at VGS=10V)

 7.2. Size:374K  aosemi
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AOT66919L

AOT66918LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Combined of low RDS(ON) and wide safe operatiing area (SOA) RDS(ON) (at VGS=10V)

 7.3. Size:766K  aosemi
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AOT66919L

AOT66916L/AOB66916LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Best in class on-resistance RDS(ON) Lowers switching loss by lower Qrr than other MOSFET RDS(ON) (at VGS=10V)

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Datasheet: AOT66518L , AOT66613 , AOT66616L , AOT66620L , AOT66811L , AOT66914L , AOT66916L , AOT66918L , 50N06 , AOT66920L , AOT780A70L , AOTF080A60L , AOTF095A60FDL , AOTF095A60L , AOTF125A60FDL , AOTF125A60L , AOTF160A60FDL .

History: AP10N9R0I | INJ0011AM1

Keywords - AOT66919L MOSFET datasheet

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