AOTF095A60L Specs and Replacement
Type Designator: AOTF095A60L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 38 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TO220F
AOTF095A60L substitution
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AOTF095A60L datasheet
aotf095a60l aot095a60l aob095a60l.pdf
AOTF095A60L/AOT095A60L/AOB095A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 152A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aotf095a60l.pdf
AOTF095A60L/AOT095A60L/AOB095A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 152A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aotf095a60fdl.pdf
AOTF095A60FDL TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aotf080a60l.pdf
AOTF080A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
Detailed specifications: AOT66914L, AOT66916L, AOT66918L, AOT66919L, AOT66920L, AOT780A70L, AOTF080A60L, AOTF095A60FDL, IRLZ44N, AOTF125A60FDL, AOTF125A60L, AOTF160A60FDL, AOTF160A60L, AOTF190A60CL, AOTF280A60L, AOTF360A70L, AOTF380A60CL
Keywords - AOTF095A60L MOSFET specs
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