AOTF125A60L
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOTF125A60L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 36
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 28
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 39
nC
trⓘ - Rise Time: 34
nS
Cossⓘ -
Output Capacitance: 85
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125
Ohm
Package:
TO220F
AOTF125A60L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOTF125A60L
Datasheet (PDF)
..1. Size:486K aosemi
aotf125a60l.pdf 
AOT125A60L/AOTF125A60L/AOB125A60LTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max
4.1. Size:452K aosemi
aotf125a60fdl.pdf
AOTF125A60FDLTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max
8.1. Size:381K aosemi
aotf12n65.pdf
AOT12N65/AOTF12N65650V, 12A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT12N65 & AOTF12N65 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
8.2. Size:433K aosemi
aotf12n50.pdf
AOT12N50/AOB12N50/AOTF12N50500V, 12A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT12N50 & AOB12N50 & AOTF12N50 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)
8.3. Size:447K aosemi
aotf12t50p.pdf
AOTF12T50P500V,12A N-Channel MOSFETGeneral Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max
8.4. Size:385K aosemi
aot12n65 aotf12n65 aob12n65.pdf
AOT12N65/AOTF12N65/AOB12N65650V, 12A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT12N65 & AOTF12N65 & AOB12N65 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)
8.5. Size:450K aosemi
aotf12n60.pdf
AOT12N60/AOTF12N60600V,12A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT12N60 & AOTF12N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
8.6. Size:324K aosemi
aotf12n30.pdf
AOT12N30/AOTF12N30300V,11.5A N-Channel MOSFETGeneral Description Product Summary VDS350V@150The AOT12N30/AOTF12N30 is fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 11.5Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
8.7. Size:590K aosemi
aotf12n60fd.pdf
AOT12N60FD/AOB12N60FD/AOTF12N60FD600V, 12A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT12N60FD/AOB12N60FD/AOTF12N60FD havebeen fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)
8.8. Size:233K aosemi
aotf12t60.pdf
AOTF12T60600V,12A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Latest Trench Power AlphaMOS-II technology Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max
8.9. Size:575K aosemi
aot12n60 aotf12n60.pdf
AOT12N60/AOTF12N60600V,12A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT12N60 & AOTF12N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
8.10. Size:498K aosemi
aotf12t60p.pdf
AOB12T60P/AOTF12T60P600V,12A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max
8.11. Size:447K aosemi
aotf12t50pl.pdf
AOTF12T50P500V,12A N-Channel MOSFETGeneral Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max
8.12. Size:250K inchange semiconductor
aotf12n65.pdf
isc N-Channel MOSFET Transistor AOTF12N65FEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.72(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
8.13. Size:259K inchange semiconductor
aotf12n50.pdf
isc N-Channel MOSFET Transistor AOTF12N50FEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.52(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
8.14. Size:250K inchange semiconductor
aotf12n60.pdf
isc N-Channel MOSFET Transistor AOTF12N60FEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
8.15. Size:252K inchange semiconductor
aotf12n30.pdf
isc N-Channel MOSFET Transistor AOTF12N30FEATURESDrain Current I = 11.5A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.42(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
8.16. Size:250K inchange semiconductor
aotf12n60fd.pdf
isc N-Channel MOSFET Transistor AOTF12N60FDFEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
8.17. Size:250K inchange semiconductor
aotf12n65l.pdf
isc N-Channel MOSFET Transistor AOTF12N65LFEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.72(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
8.18. Size:251K inchange semiconductor
aotf12t50pl.pdf
isc N-Channel MOSFET Transistor AOTF12T50PLFEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONGeneral Lighting for LED and CCFLAC/DC Power suppliesABSOL
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
