AOTF160A60L Specs and Replacement
Type Designator: AOTF160A60L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 62 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO220F
AOTF160A60L substitution
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AOTF160A60L datasheet
aotf160a60l aot160a60l aob160a60l.pdf
AOTF160A60L/AOT160A60L/AOB160A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aotf160a60l.pdf
AOTF160A60L/AOT160A60L/AOB160A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aotf160a60fdl.pdf
AOTF160A60FDL TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 40A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aot16n50 aotf16n50.pdf
AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 16A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOT66920L, AOT780A70L, AOTF080A60L, AOTF095A60FDL, AOTF095A60L, AOTF125A60FDL, AOTF125A60L, AOTF160A60FDL, AO3400, AOTF190A60CL, AOTF280A60L, AOTF360A70L, AOTF380A60CL, AOTF380A60L, AOTF450A70L, AOTF600A60L, AOTF600A70FL
Keywords - AOTF160A60L MOSFET specs
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