AOTF280A60L MOSFET Datasheet: N-Ch, 600V, 14A. Full specification with pinout and replacement list

AOTF280A60L Specs and Replacement

Type Designator: AOTF280A60L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO220F

AOTF280A60L substitution

- MOSFET ⓘ Cross-Reference Search

AOTF280A60L datasheet

..1. Size:488K aosemi
aotf280a60l aot280a60l aob280a60l.pdf pdf_icon

AOTF280A60L/AOT280A60L/AOB280A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

..2. Size:488K aosemi
aotf280a60l.pdf pdf_icon

8.1. Size:363K aosemi
aotf288l.pdf pdf_icon

AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description Product Summary VDS The AOT288L & AOB288L & AOTF288L uses trench 80V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒

8.2. Size:242K aosemi
aotf286l.pdf pdf_icon

AOTF286L 80V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 80V Low RDS(ON) ID (at VGS=10V) 56A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒