All MOSFET. AOTF280A60L Datasheet

 

AOTF280A60L MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOTF280A60L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23.5 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO220F

 AOTF280A60L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOTF280A60L Datasheet (PDF)

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 aotf280a60l.pdf

AOTF280A60L AOTF280A60L

AOTF280A60L/AOT280A60L/AOB280A60LTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max

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 aotf288l.pdf

AOTF280A60L AOTF280A60L

AOT288L/AOB288L/AOTF288L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT288L & AOB288L & AOTF288L uses trench 80VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

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 aotf286l.pdf

AOTF280A60L AOTF280A60L

AOTF286L80V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 80V Low RDS(ON) ID (at VGS=10V) 56A Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:236K  inchange semiconductor
 aotf288l.pdf

AOTF280A60L AOTF280A60L

isc N-Channel MOSFET Transistor AOTF288LFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 9.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

 8.4. Size:236K  inchange semiconductor
 aotf286l.pdf

AOTF280A60L AOTF280A60L

isc N-Channel MOSFET Transistor AOTF286LFEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IRFSL52N15D | FDB8870 | FDB8444

 

 
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