All MOSFET. AOTF360A70L Datasheet

 

AOTF360A70L MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOTF360A70L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 29.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.6 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22.5 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO220F

 AOTF360A70L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOTF360A70L Datasheet (PDF)

 ..1. Size:669K  aosemi
 aotf360a70l.pdf

AOTF360A70L AOTF360A70L

AOT360A70L/AOTF360A70L/AOB360A70LTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 48A Optimized switching parameters for better EMI RDS(ON),max

 9.1. Size:158K  aosemi
 aotf3n50.pdf

AOTF360A70L AOTF360A70L

AOT3N50/AOTF3N50500V, 3A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT3N50 & AOTF3N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 3Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.2. Size:329K  aosemi
 aotf3n100.pdf

AOTF360A70L AOTF360A70L

AOT3N100/AOTF3N1001000V,2.8A N-Channel MOSFETGeneral Description Product Summary VDS1100@150The AOT3N100 & AOTF3N100 are fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 9.3. Size:272K  aosemi
 aotf3n90.pdf

AOTF360A70L AOTF360A70L

AOTF3N90900V, 2.4A N-Channel MOSFETGeneral Description Product Summary VDS1000V@150The AOTF3N90 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 2.4Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

 9.4. Size:274K  aosemi
 aotf3n80.pdf

AOTF360A70L AOTF360A70L

AOTF3N80800V, 2.8A N-Channel MOSFETGeneral Description Product Summary VDS900V@150The AOTF3N80 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 2.8Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

 9.5. Size:647K  aosemi
 aotf380a60l.pdf

AOTF360A70L AOTF360A70L

AOTF380A60L/AOT380A60L/AOB380A60LTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max

 9.6. Size:649K  aosemi
 aotf380a60cl.pdf

AOTF360A70L AOTF360A70L

AOTF380A60CL/AOT380A60CL/AOB380A60CLTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max

 9.7. Size:251K  inchange semiconductor
 aotf3n50.pdf

AOTF360A70L AOTF360A70L

isc N-Channel MOSFET Transistor AOTF3N50FEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.8. Size:252K  inchange semiconductor
 aotf3n100.pdf

AOTF360A70L AOTF360A70L

isc N-Channel MOSFET Transistor AOTF3N100FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.9. Size:252K  inchange semiconductor
 aotf3n90.pdf

AOTF360A70L AOTF360A70L

isc N-Channel MOSFET Transistor AOTF3N90FEATURESDrain Current I =2.4A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R =6.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.10. Size:252K  inchange semiconductor
 aotf3n80.pdf

AOTF360A70L AOTF360A70L

isc N-Channel MOSFET Transistor AOTF3N80FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =4.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: AP4417GH

 

 
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