AOTF360A70L Datasheet and Replacement. Cross Reference Search

..1. Size:669K aosemi
aotf360a70l.pdf pdf_icon

AOT360A70L/AOTF360A70L/AOB360A70LTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 48A Optimized switching parameters for better EMI RDS(ON),max

9.1. Size:158K aosemi
aotf3n50.pdf pdf_icon

AOT3N50/AOTF3N50500V, 3A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT3N50 & AOTF3N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 3Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

9.2. Size:329K aosemi
aotf3n100.pdf pdf_icon

AOT3N100/AOTF3N1001000V,2.8A N-Channel MOSFETGeneral Description Product Summary VDS1100@150The AOT3N100 & AOTF3N100 are fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

9.3. Size:272K aosemi
aotf3n90.pdf pdf_icon

AOTF3N90900V, 2.4A N-Channel MOSFETGeneral Description Product Summary VDS1000V@150The AOTF3N90 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 2.4Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

9.4. Size:274K aosemi
aotf3n80.pdf pdf_icon

AOTF3N80800V, 2.8A N-Channel MOSFETGeneral Description Product Summary VDS900V@150The AOTF3N80 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 2.8Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

9.5. Size:647K aosemi
aotf380a60l.pdf pdf_icon

AOTF380A60L/AOT380A60L/AOB380A60LTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max

9.6. Size:649K aosemi
aotf380a60cl.pdf pdf_icon

AOTF380A60CL/AOT380A60CL/AOB380A60CLTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max

9.7. Size:251K inchange semiconductor
aotf3n50.pdf pdf_icon

isc N-Channel MOSFET Transistor AOTF3N50FEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

9.8. Size:252K inchange semiconductor
aotf3n100.pdf pdf_icon

isc N-Channel MOSFET Transistor AOTF3N100FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.9. Size:252K inchange semiconductor
aotf3n90.pdf pdf_icon

isc N-Channel MOSFET Transistor AOTF3N90FEATURESDrain Current I =2.4A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R =6.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.10. Size:252K inchange semiconductor
aotf3n80.pdf pdf_icon

isc N-Channel MOSFET Transistor AOTF3N80FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =4.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

AOTF360A70L Datasheet (PDF)

Keywords - AOTF360A70L MOSFET datasheet

LIST

Last Update

Popular searches

AllTransistors(C)