AOTF66613L Specs and Replacement
Type Designator: AOTF66613L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 1500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: TO220F
AOTF66613L substitution
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AOTF66613L datasheet
aotf66613l.pdf
AOTF66613L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 90A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒
aotf66616l.pdf
AOTF66616L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 72.5A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒
aotf66920l.pdf
AOTF66920L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 41A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒
aotf66811l.pdf
AOTF66811L TM 80V N-Channel AlphaSGT2 General Description Product Summary VDS 80V Trench Power AlphaSGT2TM technology ID (at VGS=10V) 80A Low RDS(ON) and optimized switching performance RoHS 2.0 and Halogen-Free Compliant RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOTF280A60L, AOTF360A70L, AOTF380A60CL, AOTF380A60L, AOTF450A70L, AOTF600A60L, AOTF600A70FL, AOTF600A70L, IRFP250N, AOTF66616L, AOTF66811L, AOTF66919L, AOTF66920L, AOTF780A70L, AOK031A60FD, AOK040A60, AOK042A60FD
Keywords - AOTF66613L MOSFET specs
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History: AP85T10AGP-HF | FXN4620F
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