All MOSFET. AOTF66616L Datasheet

 

AOTF66616L Datasheet and Replacement


   Type Designator: AOTF66616L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 72.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15.5 nS
   Cossⓘ - Output Capacitance: 940 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO220F
      - MOSFET Cross-Reference Search

 

AOTF66616L Datasheet (PDF)

 ..1. Size:723K  aosemi
 aotf66616l.pdf pdf_icon

AOTF66616L

AOTF66616LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 72.5A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 6.1. Size:376K  aosemi
 aotf66613l.pdf pdf_icon

AOTF66616L

AOTF66613LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 90A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 8.1. Size:742K  aosemi
 aotf66920l.pdf pdf_icon

AOTF66616L

AOTF66920LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 41A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.2. Size:370K  aosemi
 aotf66811l.pdf pdf_icon

AOTF66616L

AOTF66811LTM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V Trench Power AlphaSGT2TM technology ID (at VGS=10V) 80A Low RDS(ON) and optimized switching performance RoHS 2.0 and Halogen-Free Compliant RDS(ON) (at VGS=10V)

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History: SFF60P05ZDB | CED05N8 | MC08N005C | AON6794 | PSMN8R5-100XS | IRLR024 | BL10N70-A

Keywords - AOTF66616L MOSFET datasheet

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