All MOSFET. AOTF66919L Datasheet

 

AOTF66919L Datasheet and Replacement


   Type Designator: AOTF66919L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO220F
 

 AOTF66919L substitution

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AOTF66919L Datasheet (PDF)

 ..1. Size:365K  aosemi
 aotf66919l.pdf pdf_icon

AOTF66919L

AOTF66919LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 50A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 7.1. Size:742K  aosemi
 aotf66920l.pdf pdf_icon

AOTF66919L

AOTF66920LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 41A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.1. Size:370K  aosemi
 aotf66811l.pdf pdf_icon

AOTF66919L

AOTF66811LTM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V Trench Power AlphaSGT2TM technology ID (at VGS=10V) 80A Low RDS(ON) and optimized switching performance RoHS 2.0 and Halogen-Free Compliant RDS(ON) (at VGS=10V)

 8.2. Size:376K  aosemi
 aotf66613l.pdf pdf_icon

AOTF66919L

AOTF66613LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 90A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

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Datasheet: AOTF380A60L , AOTF450A70L , AOTF600A60L , AOTF600A70FL , AOTF600A70L , AOTF66613L , AOTF66616L , AOTF66811L , AON7408 , AOTF66920L , AOTF780A70L , AOK031A60FD , AOK040A60 , AOK042A60FD , AOK065A60 , AOK065A60FD , AOK095A60 .

Keywords - AOTF66919L MOSFET datasheet

 AOTF66919L cross reference
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 AOTF66919L replacement

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