AOK065A60FD Datasheet and Replacement
Type Designator: AOK065A60FD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 446 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 86 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO247
AOK065A60FD substitution
AOK065A60FD Datasheet (PDF)
aok065a60fd.pdf

AOK065A60FDTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 200A Optimized switching parameters for better EMI RDS(ON),max
aok065a60.pdf

AOK065A60TM600V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 168A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AOTF66811L , AOTF66919L , AOTF66920L , AOTF780A70L , AOK031A60FD , AOK040A60 , AOK042A60FD , AOK065A60 , AO3400 , AOK095A60 , AOK095A60FD , AOK095A60FDL , AOK125A60 , AOK125A60FDL , AOK160A60 , AOK160A60FDL , AOK2500L .
History: CEB6086 | AP60WN2K3H
Keywords - AOK065A60FD MOSFET datasheet
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History: CEB6086 | AP60WN2K3H



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