AOI360A70 Datasheet and Replacement
Type Designator: AOI360A70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 138 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 34 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO251A
AOI360A70 substitution
AOI360A70 Datasheet (PDF)
aoi360a70.pdf
AOD360A70/AOI360A70TM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 48A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AOK160A60 , AOK160A60FDL , AOK2500L , AOK66518 , AOK66613 , AOK66914 , AOI1R4A70 , AOI21357 , IRF530 , AOI380A60C , AOI450A70 , AOI600A60 , AOI600A70 , AOI600A70R , AOI950A70 , AOY66620 , AOY66919 .
History: 12N60L-TA3-T | MTNN8453KQ8 | IXZR08N120B | CS8N60P | 24NM60G-T3F-T | MTB09P04DJ3 | DH850N10
Keywords - AOI360A70 MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 12N60L-TA3-T | MTNN8453KQ8 | IXZR08N120B | CS8N60P | 24NM60G-T3F-T | MTB09P04DJ3 | DH850N10
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