AOI450A70 Datasheet and Replacement
Type Designator: AOI450A70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO251A
AOI450A70 substitution
AOI450A70 Datasheet (PDF)
aoi450a70.pdf
AOD450A70/AOI450A70TM700V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AOK2500L , AOK66518 , AOK66613 , AOK66914 , AOI1R4A70 , AOI21357 , AOI360A70 , AOI380A60C , NCEP15T14 , AOI600A60 , AOI600A70 , AOI600A70R , AOI950A70 , AOY66620 , AOY66919 , AOY66920 , AOY66923 .
History: IPB081N06L3G | IXTH24N50Q | DH850N10B | CS8N60P | IPB60R120P7 | IPB065N06LG | DH850N10
Keywords - AOI450A70 MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IPB081N06L3G | IXTH24N50Q | DH850N10B | CS8N60P | IPB60R120P7 | IPB065N06LG | DH850N10
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