All MOSFET. AOI600A70 Datasheet

 

AOI600A70 Datasheet and Replacement


   Type Designator: AOI600A70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO251A
 

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AOI600A70 Datasheet (PDF)

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AOI600A70

AOD600A70/AOI600A70TM700V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 0.1. Size:528K  aosemi
 aoi600a70r.pdf pdf_icon

AOI600A70

AOD600A70R/AOI600A70RTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 7.1. Size:486K  aosemi
 aoi600a60.pdf pdf_icon

AOI600A70

AOD600A60/AOI600A60TM600V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: AOK66613 , AOK66914 , AOI1R4A70 , AOI21357 , AOI360A70 , AOI380A60C , AOI450A70 , AOI600A60 , 20N50 , AOI600A70R , AOI950A70 , AOY66620 , AOY66919 , AOY66920 , AOY66923 , AOD1R4A70 , AOD210V60E .

History: 2SK2020-01 | IRFU2905ZPBF | SIHF9610 | S40N08M | SSM4800AGM | SL2302S | 2SK1430

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