All MOSFET. AOI600A70R Datasheet

 

AOI600A70R MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOI600A70R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.6 V
   |Id|ⓘ - Maximum Drain Current: 8.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.5 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO251A

 AOI600A70R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOI600A70R Datasheet (PDF)

 ..1. Size:528K  aosemi
 aoi600a70r.pdf

AOI600A70R AOI600A70R

AOD600A70R/AOI600A70RTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 5.1. Size:660K  aosemi
 aoi600a70.pdf

AOI600A70R AOI600A70R

AOD600A70/AOI600A70TM700V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 7.1. Size:486K  aosemi
 aoi600a60.pdf

AOI600A70R AOI600A70R

AOD600A60/AOI600A60TM600V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK2051-L

 

 
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