All MOSFET. AOY66620 Datasheet

 

AOY66620 Datasheet and Replacement


   Type Designator: AOY66620
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 58 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO251B
 

 AOY66620 substitution

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AOY66620 Datasheet (PDF)

 ..1. Size:349K  aosemi
 aoy66620.pdf pdf_icon

AOY66620

AOY66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 58A Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)

 9.1. Size:569K  aosemi
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AOY66620

AOY66920TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) RDS(ON) (at VGS=10V)

 9.2. Size:593K  aosemi
 aoy66923.pdf pdf_icon

AOY66620

AOY66923TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 58A Low RDS(ON) RDS(ON) (at VGS=10V)

 9.3. Size:353K  aosemi
 aoy66919.pdf pdf_icon

AOY66620

AOY66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

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Datasheet: AOI21357 , AOI360A70 , AOI380A60C , AOI450A70 , AOI600A60 , AOI600A70 , AOI600A70R , AOI950A70 , IRFP450 , AOY66919 , AOY66920 , AOY66923 , AOD1R4A70 , AOD210V60E , AOD21357 , AOD280A60 , AOD32324 .

History: STU466S

Keywords - AOY66620 MOSFET datasheet

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