AOY66620 Specs and Replacement
Type Designator: AOY66620
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 58 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO251B
AOY66620 substitution
- MOSFET ⓘ Cross-Reference Search
AOY66620 datasheet
aoy66620.pdf
AOY66620 TM 60V N-Channel AlphaSGT General Description Product Summary VDS Trench Power MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 58A Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V) ... See More ⇒
aoy66920.pdf
AOY66920 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒
aoy66923.pdf
AOY66923 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 58A Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒
aoy66919.pdf
AOY66919 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOI21357, AOI360A70, AOI380A60C, AOI450A70, AOI600A60, AOI600A70, AOI600A70R, AOI950A70, AO4407, AOY66919, AOY66920, AOY66923, AOD1R4A70, AOD210V60E, AOD21357, AOD280A60, AOD32324
Keywords - AOY66620 MOSFET specs
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