AOY66923 Specs and Replacement

Type Designator: AOY66923

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 73 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO251B

AOY66923 substitution

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AOY66923 datasheet

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 aoy66923.pdf pdf_icon

AOY66923

AOY66923 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 58A Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

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 aoy66920.pdf pdf_icon

AOY66923

AOY66920 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

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 aoy66919.pdf pdf_icon

AOY66923

AOY66919 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:349K  aosemi
 aoy66620.pdf pdf_icon

AOY66923

AOY66620 TM 60V N-Channel AlphaSGT General Description Product Summary VDS Trench Power MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 58A Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AOI450A70, AOI600A60, AOI600A70, AOI600A70R, AOI950A70, AOY66620, AOY66919, AOY66920, IRFP250, AOD1R4A70, AOD210V60E, AOD21357, AOD280A60, AOD32324, AOD32326, AOD32334C, AOD360A70

Keywords - AOY66923 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.