AOD210V60E Datasheet and Replacement
Type Designator: AOD210V60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: TO252
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AOD210V60E Datasheet (PDF)
aod210v60e.pdf

AOD210V60ETM600V, a MOSE N-Channel Power TransistorGeneral Description Product Summary Excellent RDS(ON)*A VDS @ Tj,max 700V Optimized switching parameters for better EMI IDM 45A performance RDS(ON),max
aod210.pdf

AOD21030V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD210 uses Trench MOSFET technology that 30V70Ais uniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance. Power losses are
aod210.pdf

isc N-Channel MOSFET Transistor AOD210FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aod2146.pdf

AOD2146TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 54A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SRT03N010LD56 | SFB052N100C2 | TSM4424CS | SSF4703DC | SDD01N70 | SM2F04NSU | BRCS200P03DP
Keywords - AOD210V60E MOSFET datasheet
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History: SRT03N010LD56 | SFB052N100C2 | TSM4424CS | SSF4703DC | SDD01N70 | SM2F04NSU | BRCS200P03DP



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