All MOSFET. AOD210V60E Datasheet

 

AOD210V60E Datasheet and Replacement


   Type Designator: AOD210V60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: TO252
 

 AOD210V60E substitution

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AOD210V60E Datasheet (PDF)

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AOD210V60E

AOD210V60ETM600V, a MOSE N-Channel Power TransistorGeneral Description Product Summary Excellent RDS(ON)*A VDS @ Tj,max 700V Optimized switching parameters for better EMI IDM 45A performance RDS(ON),max

 8.1. Size:241K  aosemi
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AOD210V60E

AOD21030V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD210 uses Trench MOSFET technology that 30V70Ais uniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance. Power losses are

 8.2. Size:264K  inchange semiconductor
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AOD210V60E

isc N-Channel MOSFET Transistor AOD210FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

 9.1. Size:331K  aosemi
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AOD210V60E

AOD2146TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 54A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: AOI600A70 , AOI600A70R , AOI950A70 , AOY66620 , AOY66919 , AOY66920 , AOY66923 , AOD1R4A70 , 5N65 , AOD21357 , AOD280A60 , AOD32324 , AOD32326 , AOD32334C , AOD360A70 , AOD380A60 , AOD380A60C .

History: ME4542 | IPD70N12S3-11 | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT

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