AOD21357
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOD21357
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 78
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 70
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 50
nC
trⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 430
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008
Ohm
Package:
TO252
AOD21357
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOD21357
Datasheet (PDF)
..1. Size:381K aosemi
aod21357.pdf 
AOD21357/AOI2135730V P-Channel MOSFETGeneral Description Product SummaryVDS-30V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -70A High Current Capability RDS(ON) (at VGS=-10V)
9.1. Size:331K aosemi
aod2146.pdf
AOD2146TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 54A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:241K aosemi
aod210.pdf
AOD21030V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD210 uses Trench MOSFET technology that 30V70Ais uniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance. Power losses are
9.3. Size:491K aosemi
aod210v60e.pdf
AOD210V60ETM600V, a MOSE N-Channel Power TransistorGeneral Description Product Summary Excellent RDS(ON)*A VDS @ Tj,max 700V Optimized switching parameters for better EMI IDM 45A performance RDS(ON),max
9.4. Size:308K aosemi
aod2144.pdf
AOD214440V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120A Low Gate Charge RDS(ON) (at VGS=10V)
9.5. Size:263K inchange semiconductor
aod2146.pdf
isc N-Channel MOSFET Transistor AOD2146FEATURESDrain Current I = 54A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
9.6. Size:264K inchange semiconductor
aod210.pdf
isc N-Channel MOSFET Transistor AOD210FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
9.7. Size:208K inchange semiconductor
aod2144.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor AOD2144FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
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