AOD21357 Datasheet and Replacement
Type Designator: AOD21357
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO252
AOD21357 substitution
AOD21357 Datasheet (PDF)
aod21357.pdf

AOD21357/AOI2135730V P-Channel MOSFETGeneral Description Product SummaryVDS-30V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -70A High Current Capability RDS(ON) (at VGS=-10V)
aod2146.pdf

AOD2146TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 54A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aod210.pdf

AOD21030V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD210 uses Trench MOSFET technology that 30V70Ais uniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance. Power losses are
aod210v60e.pdf

AOD210V60ETM600V, a MOSE N-Channel Power TransistorGeneral Description Product Summary Excellent RDS(ON)*A VDS @ Tj,max 700V Optimized switching parameters for better EMI IDM 45A performance RDS(ON),max
Datasheet: AOI600A70R , AOI950A70 , AOY66620 , AOY66919 , AOY66920 , AOY66923 , AOD1R4A70 , AOD210V60E , STP80NF70 , AOD280A60 , AOD32324 , AOD32326 , AOD32334C , AOD360A70 , AOD380A60 , AOD380A60C , AOD450A70 .
History: 2SK4037
Keywords - AOD21357 MOSFET datasheet
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History: 2SK4037



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