All MOSFET. AOD21357 Datasheet

 

AOD21357 Datasheet and Replacement


   Type Designator: AOD21357
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 50 nC
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO252
 

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AOD21357 Datasheet (PDF)

 ..1. Size:381K  aosemi
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AOD21357

AOD21357/AOI2135730V P-Channel MOSFETGeneral Description Product SummaryVDS-30V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -70A High Current Capability RDS(ON) (at VGS=-10V)

 9.1. Size:331K  aosemi
aod2146.pdf pdf_icon

AOD21357

AOD2146TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 54A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:241K  aosemi
aod210.pdf pdf_icon

AOD21357

AOD21030V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD210 uses Trench MOSFET technology that 30V70Ais uniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance. Power losses are

 9.3. Size:491K  aosemi
aod210v60e.pdf pdf_icon

AOD21357

AOD210V60ETM600V, a MOSE N-Channel Power TransistorGeneral Description Product Summary Excellent RDS(ON)*A VDS @ Tj,max 700V Optimized switching parameters for better EMI IDM 45A performance RDS(ON),max

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: BUK6C2R1-55C

Keywords - AOD21357 MOSFET datasheet

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