AOD600A70R Specs and Replacement
Type Designator: AOD600A70R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 25 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO252
AOD600A70R substitution
- MOSFET ⓘ Cross-Reference Search
AOD600A70R datasheet
aod600a70r.pdf
AOD600A70R/AOI600A70R TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aod600a70r aoi600a70r.pdf
AOD600A70R/AOI600A70R TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aod600a70 aoi600a70.pdf
AOD600A70/AOI600A70 TM 700V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aod600a70.pdf
AOD600A70/AOI600A70 TM 700V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
Detailed specifications: AOD32326, AOD32334C, AOD360A70, AOD380A60, AOD380A60C, AOD450A70, AOD600A60, AOD600A70, 2N60, AOD66616, AOD66620, AOD66643, AOD66919, AOD66920, AOD66923, AOD780A70, AOD950A70
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