AOD600A70R Specs and Replacement

Type Designator: AOD600A70R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO252

AOD600A70R substitution

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AOD600A70R datasheet

 ..1. Size:904K  aosemi
aod600a70r.pdf pdf_icon

AOD600A70R

AOD600A70R/AOI600A70R TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 ..2. Size:904K  aosemi
aod600a70r aoi600a70r.pdf pdf_icon

AOD600A70R

AOD600A70R/AOI600A70R TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 5.1. Size:660K  aosemi
aod600a70 aoi600a70.pdf pdf_icon

AOD600A70R

AOD600A70/AOI600A70 TM 700V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 5.2. Size:660K  aosemi
aod600a70.pdf pdf_icon

AOD600A70R

AOD600A70/AOI600A70 TM 700V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

Detailed specifications: AOD32326, AOD32334C, AOD360A70, AOD380A60, AOD380A60C, AOD450A70, AOD600A60, AOD600A70, 2N60, AOD66616, AOD66620, AOD66643, AOD66919, AOD66920, AOD66923, AOD780A70, AOD950A70

Keywords - AOD600A70R MOSFET specs

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