AOD600A70R
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOD600A70R
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 104
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.6
V
|Id|ⓘ - Maximum Drain Current: 8.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15.5
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 25
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6
Ohm
Package:
TO252
AOD600A70R
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOD600A70R
Datasheet (PDF)
..1. Size:904K aosemi
aod600a70r.pdf 
AOD600A70R/AOI600A70RTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max
5.1. Size:660K aosemi
aod600a70.pdf
AOD600A70/AOI600A70TM700V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max
7.1. Size:486K aosemi
aod600a60.pdf
AOD600A60/AOI600A60TM600V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max
9.1. Size:524K aosemi
aod609g.pdf
AOD609G Complementary Enhancement Mode Field Effect Transistor General DescriptionFeaturesThe AOD609G uses advanced trench technology n-channelMOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 40V, ID = 12A (VGS=10V) charge. The complementary MOSFETs may be used RDS(ON)
9.2. Size:563K aosemi
aod607a.pdf
AOD607A30V Complementary MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V -30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 8A -12A Low Gate Charge RDS(ON) (at VGS=10V)
9.3. Size:269K aosemi
aod609.pdf
AOD609Complementary Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD609 uses advanced trench technology n-channelMOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 40V, ID = 12A (VGS=10V)charge. The complementary MOSFETs may be usedRDS(ON)
9.4. Size:239K aosemi
aod606.pdf
AOD606Complementary Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD606 uses advanced trench n-channel p-channeltechnology MOSFETs to provide VDS (V) = 40V -40Vexcellent RDS(ON) and low gate charge. ID = 8A (VGS=10V) -8A (VGS = -10V)The complementary MOSFETs may be RDS(ON) RDS(ON) used in H-bridge, Inverters and other
9.5. Size:392K aosemi
aod603a.pdf
AOD603A60V Complementary MOSFETGeneral Description Product Summary N-Channel P-ChannelThe AOD603A uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gateVDS= 60V -60Vcharge. The complementary MOSFETs may be ID= 13A (VGS=10V) -13A (VGS=-10V)used in H-bridge, Inverters and other applications. RDS(ON) RDS(ON)
9.6. Size:209K aosemi
aod607.pdf
AOD607Complementary Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD607 uses advanced trench n-channel p-channeltechnology MOSFETs to provide VDS (V) = 30V -30Vexcellent RDS(ON) and low gate charge. ID = 12A (VGS=10V) -12A (VGS = -10V)The complementary MOSFETs may be RDS(ON) RDS(ON) used in H-bridge, Inverters and other
9.7. Size:940K cn vbsemi
aod603a.pdf
AOD603Awww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.030 at VGS = 10 V 35 TrenchFET Power MOSFETN-Channel 60 6 nC0.033 at VGS = 4.5 V 30 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 19APPLICATIONSP-Channel - 60 8 nC0.060 at VGS = -
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