AOD66616 MOSFET Datasheet: N-Ch, 60V, 70A. Full specification with pinout and replacement list

AOD66616 Specs and Replacement

   Type Designator: AOD66616
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 113 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 15.5 nS
   Cossⓘ - Output Capacitance: 940 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: TO252

AOD66616 substitution

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AOD66616 datasheet

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AOD66616 60V N-Channel AlphaSGT TM General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒

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AOD66643 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

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AOD66620 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 58A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V) ... See More ⇒

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AOD661 30V Dual Complementary MOSFET General Description Product Summary Q1 Q2 VDS 30V -30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A -12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒