All MOSFET. AOD66620 Datasheet

 

AOD66620 Datasheet and Replacement


   Type Designator: AOD66620
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 58 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO252
 

 AOD66620 substitution

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AOD66620 Datasheet (PDF)

 ..1. Size:356K  aosemi
 aod66620.pdf pdf_icon

AOD66620

AOD66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 58A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)

 8.1. Size:369K  aosemi
 aod66643.pdf pdf_icon

AOD66620

AOD66643TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) RDS(ON) (at VGS=10V)

 8.2. Size:732K  aosemi
 aod66616.pdf pdf_icon

AOD66620

AOD6661660V N-Channel AlphaSGT TMGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 9.1. Size:555K  aosemi
 aod661.pdf pdf_icon

AOD66620

AOD66130V Dual Complementary MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V -30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A -12A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AOD360A70 , AOD380A60 , AOD380A60C , AOD450A70 , AOD600A60 , AOD600A70 , AOD600A70R , AOD66616 , P60NF06 , AOD66643 , AOD66919 , AOD66920 , AOD66923 , AOD780A70 , AOD950A70 , AOD609G , AOW125A60 .

History: APM9988QG | APQ01SN60AB

Keywords - AOD66620 MOSFET datasheet

 AOD66620 cross reference
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