AOD66620 Specs and Replacement
Type Designator: AOD66620
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 58 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO252
AOD66620 substitution
- MOSFET ⓘ Cross-Reference Search
AOD66620 datasheet
aod66620.pdf
AOD66620 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 58A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V) ... See More ⇒
aod66643.pdf
AOD66643 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒
aod66616.pdf
AOD66616 60V N-Channel AlphaSGT TM General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒
aod661.pdf
AOD661 30V Dual Complementary MOSFET General Description Product Summary Q1 Q2 VDS 30V -30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A -12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOD360A70, AOD380A60, AOD380A60C, AOD450A70, AOD600A60, AOD600A70, AOD600A70R, AOD66616, P60NF06, AOD66643, AOD66919, AOD66920, AOD66923, AOD780A70, AOD950A70, AOD609G, AOW125A60
Keywords - AOD66620 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
