AOWF160A60
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOWF160A60
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 20
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6
V
|Id|ⓘ - Maximum Drain Current: 24
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 46
nC
trⓘ - Rise Time: 29
nS
Cossⓘ -
Output Capacitance: 62
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16
Ohm
Package: TO262F
AOWF160A60
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOWF160A60
Datasheet (PDF)
..1. Size:476K aosemi
aowf160a60.pdf 
AOWF160A60/AOW160A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max
9.1. Size:324K aosemi
aowf14n50.pdf
AOW14N50/AOWF14N50500V, 14A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW14N50 & AOWF14N50 have been fabricated 600V@150using an advanced high voltage MOSFET process that is 14A ID (at VGS=10V)designed to deliver high levels of performance and
9.2. Size:341K aosemi
aowf10n65.pdf
AOW10N65/AOWF10N65650V,10A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOW10N65/AOWF10N65 is fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 10Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
9.3. Size:327K aosemi
aowf15s60.pdf
AOW15S60/AOWF15S60TM600V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW15S60 & AOWF15S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 63Adesigned to deliver high levels of performance and RDS(ON),max 0.29robustness in switching applications. Qg,typ 16nCBy providing low RDS(on), Qg an
9.4. Size:222K aosemi
aowf12t60p.pdf
AOWF12T60P600V,12A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max
9.5. Size:259K aosemi
aowf11s65.pdf
AOW11S65/AOWF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOW11S65 & AOWF11S65 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 45Adesigned to deliver high levels of performance and RDS(ON),max 0.399robustness in switching applications. Qg,typ 13.2nCBy providing low RDS(on), Qg
9.6. Size:262K aosemi
aowf12n60.pdf
AOW12N60/AOWF12N60600V,12A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW12N60 & AOWF12N60 have been fabricated 700V@15012Ausing an advanced high voltage MOSFET process that is ID (at VGS=10V)designed to deliver high levels of performance and
9.7. Size:262K aosemi
aowf15s65.pdf
AOW15S65/AOWF15S65TM650V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOW15S65 & AOWF15S65 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 60Adesigned to deliver high levels of performance and RDS(ON),max 0.29robustness in switching applications. Qg,typ 17.2nCBy providing low RDS(on), Qg
9.8. Size:496K aosemi
aow10n60 aowf10n60.pdf
AOW10N60/AOWF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOW10N60 & AOWF10N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
9.9. Size:542K aosemi
aowf10t60p.pdf
AOW10T60P/AOWF10T60P600V,10A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 40A Low Ciss and Crss RDS(ON),max
9.10. Size:240K aosemi
aowf12n65.pdf
AOW12N65/AOWF12N65650V, 12A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOW12N65 & AOWF12N65 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
9.11. Size:277K aosemi
aowf11s60.pdf
AOW11S60/AOWF11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW11S60 & AOWF11S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 45Adesigned to deliver high levels of performance and RDS(ON),max 0.399robustness in switching applications. Qg,typ 11nCBy providing low RDS(on), Qg a
9.12. Size:281K aosemi
aowf12n50.pdf
AOW12N50/AOWF12N50500V, 12A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW12N50 & AOWF12N50 have been fabricated 600V@15012Ausing an advanced high voltage MOSFET process that is ID (at VGS=10V)designed to deliver high levels of performance and
9.13. Size:299K aosemi
aowf11n70.pdf
AOWF11N70700V,11A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOWF11N70 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 11Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
9.14. Size:447K aosemi
aowf11n60.pdf
AOWF11N60600V,11A N-Channel MOSFETGeneral Description Product Summary VDSThe AOWF11N60 has been fabricated using an 700V@150advanced high voltage MOSFET process that is designed ID (at VGS=10V) 11Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
9.15. Size:432K aosemi
aowf11c60.pdf
AOWF11C60600V,11A N-Channel MOSFETGeneral Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 80A Low Ciss and Crss RDS(ON),max
9.16. Size:476K aosemi
aowf125a60.pdf
AOW125A60/AOWF125A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max
9.17. Size:371K aosemi
aowf190a60.pdf
AOWF190A60TM 600V, MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max
9.18. Size:464K aosemi
aowf190a60c.pdf
AOWF190A60C/AOW190A60CTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max
9.19. Size:245K aosemi
aowf10n60.pdf
AOW10N60/AOWF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOW10N60 & AOWF10N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
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