AOWF450A70 MOSFET. Datasheet pdf. Equivalent
Type Designator: AOWF450A70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 26 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 30 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO262F
AOWF450A70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOWF450A70 Datasheet (PDF)
aowf450a70.pdf
AOWF450A70TM 700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max
aowf4s60.pdf
AOW4S60/AOWF4S60TM600V 4A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW4S60 & AOWF4S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 16Adesigned to deliver high levels of performance and RDS(ON),max 0.9robustness in switching applications. Qg,typ 6nCBy providing low RDS(on), Qg and EOSS
aowf412.pdf
AOWF412100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary VDS 100VThe AOWF412 are fabricated with SDMOSTM trenchtechnology that combines excellent RDS(ON) with low gate ID (at VGS=10V) 30Acharge & low Qrr.The result is outstanding efficiency with RDS(ON) (at VGS=10V)
aowf4n60.pdf
AOWF4N60600V,4A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOWF4N60 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 4Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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