AOB190A60CL Specs and Replacement

Type Designator: AOB190A60CL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO263

AOB190A60CL substitution

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AOB190A60CL datasheet

 ..1. Size:484K  aosemi
aotf190a60cl aot190a60cl aob190a60cl.pdf pdf_icon

AOB190A60CL

AOTF190A60CL/AOT190A60CL/AOB190A60CL TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 ..2. Size:484K  aosemi
aob190a60cl.pdf pdf_icon

AOB190A60CL

AOTF190A60CL/AOT190A60CL/AOB190A60CL TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 5.1. Size:948K  aosemi
aob190a60l.pdf pdf_icon

AOB190A60CL

AOB190A60L/AOT190A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

Detailed specifications: AOWF450A70, AOWF600A60, AOWF600A70, AOWF600A70F, AOWF780A70, AOB095A60L, AOB125A60L, AOB160A60L, IRF840, AOB190A60L, AOB280A60L, AOB360A70L, AOB380A60CL, AOB450A70L, AOB600A60L, AOB600A70FL, AOB600A70L

Keywords - AOB190A60CL MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.