All MOSFET. AOB280A60L Datasheet

 

AOB280A60L Datasheet and Replacement


   Type Designator: AOB280A60L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO263
 

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AOB280A60L Datasheet (PDF)

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AOB280A60L

AOTF280A60L/AOT280A60L/AOB280A60LTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max

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AOB280A60L

AOT280L/AOB280L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

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AOB280A60L

AOT280L/AOB280L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 8.3. Size:238K  inchange semiconductor
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AOB280A60L

isc N-Channel MOSFET Transistor AOB280LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

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Datasheet: AOWF600A70 , AOWF600A70F , AOWF780A70 , AOB095A60L , AOB125A60L , AOB160A60L , AOB190A60CL , AOB190A60L , IRF540N , AOB360A70L , AOB380A60CL , AOB450A70L , AOB600A60L , AOB600A70FL , AOB600A70L , AOB66216L , AOB66518L .

History: NCE65T260F

Keywords - AOB280A60L MOSFET datasheet

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 AOB280A60L replacement

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