AOB66613L Specs and Replacement

Type Designator: AOB66613L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 260 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: TO263

AOB66613L substitution

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AOB66613L datasheet

 ..1. Size:395K  aosemi
 aob66613l.pdf pdf_icon

AOB66613L

AOT66613L/AOB66613L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒

 ..2. Size:395K  aosemi
 aot66613l aob66613l.pdf pdf_icon

AOB66613L

AOT66613L/AOB66613L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒

 7.1. Size:1258K  aosemi
 aot66616l aob66616l.pdf pdf_icon

AOB66613L

AOT66616L/AOB66616L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒

 7.2. Size:788K  aosemi
 aob66616l.pdf pdf_icon

AOB66613L

AOT66616L/AOB66616L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AOB360A70L, AOB380A60CL, AOB450A70L, AOB600A60L, AOB600A70FL, AOB600A70L, AOB66216L, AOB66518L, IRF640N, AOB66616L, AOB66620L, AOB66811L, AOB66916L, AOB66919L, AOB66920L, AOB66935L, AOB780A70L

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