AOB66916L Specs and Replacement
Type Designator: AOB66916L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 277 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 1660 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: TO263
AOB66916L substitution
- MOSFET ⓘ Cross-Reference Search
AOB66916L datasheet
aob66916l.pdf
AOT66916L/AOB66916L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Best in class on-resistance RDS(ON) Lowers switching loss by lower Qrr than other MOSFET RDS(ON) (at VGS=10V) ... See More ⇒
aot66916l aob66916l.pdf
AOT66916L/AOB66916L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Best in class on-resistance RDS(ON) Lowers switching loss by lower Qrr than other MOSFET RDS(ON) (at VGS=10V) ... See More ⇒
aot66914l aob66914l.pdf
AOT66914L/AOB66914L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Extremely Low RDS(ON) Optimized switching performance RDS(ON) (at VGS=10V) ... See More ⇒
aob66918l.pdf
AOB66918L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Combined of low RDS(ON) and wide safe operatiing area (SOA) RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOB600A70FL, AOB600A70L, AOB66216L, AOB66518L, AOB66613L, AOB66616L, AOB66620L, AOB66811L, IRF3710, AOB66919L, AOB66920L, AOB66935L, AOB780A70L, AOTL095A60, AOTL125A60, AOTL130A60FD, AOTL160A60
Keywords - AOB66916L MOSFET specs
AOB66916L cross reference
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AOB66916L replacement
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