All MOSFET. FQPF5N40 Datasheet

 

FQPF5N40 Datasheet and Replacement


   Type Designator: FQPF5N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO220F
 

 FQPF5N40 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FQPF5N40 Datasheet (PDF)

 ..1. Size:728K  fairchild semi
fqpf5n40.pdf pdf_icon

FQPF5N40

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 400V, RDS(on) = 1.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology has been

 8.1. Size:858K  fairchild semi
fqp5n60c fqpf5n60c fqpf5n60cydtu.pdf pdf_icon

FQPF5N40

TMQFETFQP5N60C/FQPF5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored t

 8.2. Size:556K  fairchild semi
fqpf5n20l.pdf pdf_icon

FQPF5N40

December 2000TMQFETQFETQFETQFETFQPF5N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

 8.3. Size:758K  fairchild semi
fqpf5n30.pdf pdf_icon

FQPF5N40

May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.9A, 300V, RDS(on) = 0.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.8 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been e

Datasheet: FDMS9600S , FQPF33N10L , FDP8442F085 , FQPF3N80C , FDMS8680 , FQPF45N15V2 , FQPF47P06 , FQPF4N90C , IRFP450 , FDD26AN06F085 , FQPF5N90 , FQPF5P20 , FQPF630 , FDMC8296 , FQPF65N06 , FQPF6N80C , FDMS8880 .

History: IXFR24N50

Keywords - FQPF5N40 MOSFET datasheet

 FQPF5N40 cross reference
 FQPF5N40 equivalent finder
 FQPF5N40 lookup
 FQPF5N40 substitution
 FQPF5N40 replacement

 

 
Back to Top

 


 
.