AOTL125A60 Specs and Replacement

Type Designator: AOTL125A60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TOLL

AOTL125A60 substitution

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AOTL125A60 datasheet

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AOTL125A60

AOTL125A60 TM 600V, a MOS5 TOLL for high density, high reliability SMPS General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

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 aotl160a60.pdf pdf_icon

AOTL125A60

AOTL160A60 600V, aMOS TM N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

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 aotl130a60fd.pdf pdf_icon

AOTL125A60

AOTL130A60FD TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 112A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 9.3. Size:456K  aosemi
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AOTL125A60

AOTL190A60 TM 600V, a MOS N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

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Detailed specifications: AOB66620L, AOB66811L, AOB66916L, AOB66919L, AOB66920L, AOB66935L, AOB780A70L, AOTL095A60, 8205A, AOTL130A60FD, AOTL160A60, AOTL190A60, AOTL42A60E, AOTL66215, AOTL66401, AOTL66515, AOTL66518

Keywords - AOTL125A60 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.