AOTL66215 Specs and Replacement

Type Designator: AOTL66215

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 305 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 1270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm

Package: TOLLA

AOTL66215 substitution

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AOTL66215 datasheet

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AOTL66215

AOTL66215 TM 120V N-Channel AlphaSGT General Description Product Summary VDS 120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 305A Combined of low RDS(ON) and wide Safe Operating Area (SOA) RDS(ON) (at VGS=10V) ... See More ⇒

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 aotl66610.pdf pdf_icon

AOTL66215

AOTL66610 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 350A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.2. Size:465K  aosemi
 aotl66608.pdf pdf_icon

AOTL66215

AOTL66608 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 400A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.3. Size:369K  aosemi
 aotl66810.pdf pdf_icon

AOTL66215

AOTL66810 TM 80V N-Channel AlphaSGT General Description Product Summary VDS 80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 420A Excellent gate charge x RDS(ON) product (FOM) PB-free lead plating, RoHS compliant RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AOB66935L, AOB780A70L, AOTL095A60, AOTL125A60, AOTL130A60FD, AOTL160A60, AOTL190A60, AOTL42A60E, AON7408, AOTL66401, AOTL66515, AOTL66518, AOTL66608, AOTL66610, AOTL66810, AOTL66810Q, AOTL66811

Keywords - AOTL66215 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs