AOTL66608 Datasheet and Replacement
Type Designator: AOTL66608
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 400 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 4300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00085 Ohm
Package: TOLLA
AOTL66608 substitution
AOTL66608 Datasheet (PDF)
aotl66608.pdf
AOTL66608TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 400A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aotl66610.pdf
AOTL66610TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 350A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aotl66215.pdf
AOTL66215TM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 305A Combined of low RDS(ON) and wide Safe Operating Area (SOA) RDS(ON) (at VGS=10V)
aotl66810.pdf
AOTL66810TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 420A Excellent gate charge x RDS(ON) product (FOM) PB-free lead plating, RoHS compliant RDS(ON) (at VGS=10V)
Datasheet: AOTL130A60FD , AOTL160A60 , AOTL190A60 , AOTL42A60E , AOTL66215 , AOTL66401 , AOTL66515 , AOTL66518 , IRF9540N , AOTL66610 , AOTL66810 , AOTL66810Q , AOTL66811 , AOTL66912 , AOTL66912Q , AOTL66914 , AOTL66915 .
Keywords - AOTL66608 MOSFET datasheet
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