All MOSFET. AOTL66810 Datasheet

 

AOTL66810 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOTL66810
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 425 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
   |Id|ⓘ - Maximum Drain Current: 420 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 175 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 3300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00125 Ohm
   Package: TOLLA

 AOTL66810 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOTL66810 Datasheet (PDF)

 ..1. Size:369K  aosemi
aotl66810.pdf

AOTL66810
AOTL66810

AOTL66810TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 420A Excellent gate charge x RDS(ON) product (FOM) PB-free lead plating, RoHS compliant RDS(ON) (at VGS=10V)

 0.1. Size:413K  aosemi
aotl66810q.pdf

AOTL66810
AOTL66810

AOTL66810QTM80V N-Channel AlphaSGT2AEC-Q101 QualifiedGeneral Description Product SummaryVDS80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 445A Excellent gate charge x RDS(ON) product (FOM) RDS(ON) (at VGS=10V)

 6.1. Size:384K  aosemi
aotl66811.pdf

AOTL66810
AOTL66810

AOTL66811TM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V AlphaSGT2TM N-Channel Power MOSFET ID (at VGS=10V) 315A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:715K  aosemi
aotl66610.pdf

AOTL66810
AOTL66810

AOTL66610TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 350A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:379K  aosemi
aotl66215.pdf

AOTL66810
AOTL66810

AOTL66215TM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 305A Combined of low RDS(ON) and wide Safe Operating Area (SOA) RDS(ON) (at VGS=10V)

 8.3. Size:465K  aosemi
aotl66608.pdf

AOTL66810
AOTL66810

AOTL66608TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 400A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.4. Size:378K  aosemi
aotl66515.pdf

AOTL66810
AOTL66810

AOTL66515TM150V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power MOSFET technology 150V Combined of low RDS(ON) and wide Safe Operating ID (at VGS=10V) 200A Area (SOA) RDS(ON) (at VGS=10V)

 8.5. Size:406K  aosemi
aotl66912q.pdf

AOTL66810
AOTL66810

AOTL66912QTM100V N-Channel AlphaSGTAEC-Q101 QualifiedGeneral Description Product SummaryVDS100V AEC-Q101 Qualified ID (at VGS=10V) 370A Trench Power MOSFET - AlphaSGTTM technology Low Rds(on) RDS(ON) (at VGS=10V)

 8.6. Size:658K  aosemi
aotl66912.pdf

AOTL66810
AOTL66810

AOTL66912TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 380A Combination of low RDS(ON) and wide safe operatingarea (SOA) RDS(ON) (at VGS=10V)

 8.7. Size:377K  aosemi
aotl66401.pdf

AOTL66810
AOTL66810

AOTL66401TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 400A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.8. Size:375K  aosemi
aotl66914.pdf

AOTL66810
AOTL66810

AOTL66914TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 220A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.9. Size:494K  aosemi
aotl66915.pdf

AOTL66810
AOTL66810

AOTL66915TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power MOSFET technology 100V Higher in-rush current enabled for faster start-up and ID (at VGS=10V) 339Ashorter down time RDS(ON) (at VGS=10V)

 8.10. Size:369K  aosemi
aotl66918.pdf

AOTL66810
AOTL66810

AOTL66918100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 100V Combined of low RDS(ON) and wide safe operatiing area ID (at VGS=10V) 214A (SOA) RDS(ON) (at VGS=10V)

 8.11. Size:370K  aosemi
aotl66518.pdf

AOTL66810
AOTL66810

AOTL66518TM150V N-Channel AlphaSGTGeneral Description Product SummaryVDS150V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 214A Combined of low RDS(ON) and wide safe operatiing area (SOA) RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AUIRFSL6535 | FHP130N10A | 2SK3510-S | NTTFS4928N | 2SK3510-ZJ | FDV301NNB9V005

 

 
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