AOTL66811 Datasheet and Replacement
Type Designator: AOTL66811
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 272 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 315 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 2130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: TOLLA
AOTL66811 substitution
AOTL66811 Datasheet (PDF)
aotl66811.pdf
AOTL66811TM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V AlphaSGT2TM N-Channel Power MOSFET ID (at VGS=10V) 315A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aotl66810.pdf
AOTL66810TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 420A Excellent gate charge x RDS(ON) product (FOM) PB-free lead plating, RoHS compliant RDS(ON) (at VGS=10V)
aotl66810q.pdf
AOTL66810QTM80V N-Channel AlphaSGT2AEC-Q101 QualifiedGeneral Description Product SummaryVDS80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 445A Excellent gate charge x RDS(ON) product (FOM) RDS(ON) (at VGS=10V)
aotl66610.pdf
AOTL66610TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 350A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AOTL66215 , AOTL66401 , AOTL66515 , AOTL66518 , AOTL66608 , AOTL66610 , AOTL66810 , AOTL66810Q , K3569 , AOTL66912 , AOTL66912Q , AOTL66914 , AOTL66915 , AOTL66918 , AOTS21115C , AOTS21311C , AOTS21313C .
History: MTP9435BDYQ8 | SJMN380R70B | MTP9435BDYAQ8 | SJMN380R80ZB
Keywords - AOTL66811 MOSFET datasheet
AOTL66811 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: MTP9435BDYQ8 | SJMN380R70B | MTP9435BDYAQ8 | SJMN380R80ZB
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