AOTL66811 Specs and Replacement

Type Designator: AOTL66811

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 272 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 315 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 2130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: TOLLA

AOTL66811 substitution

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AOTL66811 datasheet

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AOTL66811

AOTL66811 TM 80V N-Channel AlphaSGT2 General Description Product Summary VDS 80V AlphaSGT2TM N-Channel Power MOSFET ID (at VGS=10V) 315A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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aotl66810.pdf pdf_icon

AOTL66811

AOTL66810 TM 80V N-Channel AlphaSGT General Description Product Summary VDS 80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 420A Excellent gate charge x RDS(ON) product (FOM) PB-free lead plating, RoHS compliant RDS(ON) (at VGS=10V) ... See More ⇒

 6.2. Size:413K  aosemi
aotl66810q.pdf pdf_icon

AOTL66811

AOTL66810Q TM 80V N-Channel AlphaSGT2 AEC-Q101 Qualified General Description Product Summary VDS 80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 445A Excellent gate charge x RDS(ON) product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:715K  aosemi
aotl66610.pdf pdf_icon

AOTL66811

AOTL66610 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 350A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AOTL66215, AOTL66401, AOTL66515, AOTL66518, AOTL66608, AOTL66610, AOTL66810, AOTL66810Q, K3569, AOTL66912, AOTL66912Q, AOTL66914, AOTL66915, AOTL66918, AOTS21115C, AOTS21311C, AOTS21313C

Keywords - AOTL66811 MOSFET specs

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