AOTL66914 Specs and Replacement
Type Designator: AOTL66914
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 272 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 220 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 1900 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: TOLLA
AOTL66914 substitution
- MOSFET ⓘ Cross-Reference Search
AOTL66914 datasheet
aotl66914.pdf
AOTL66914 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 220A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aotl66912q.pdf
AOTL66912Q TM 100V N-Channel AlphaSGT AEC-Q101 Qualified General Description Product Summary VDS 100V AEC-Q101 Qualified ID (at VGS=10V) 370A Trench Power MOSFET - AlphaSGTTM technology Low Rds(on) RDS(ON) (at VGS=10V) ... See More ⇒
aotl66912.pdf
AOTL66912 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 380A Combination of low RDS(ON) and wide safe operating area (SOA) RDS(ON) (at VGS=10V) ... See More ⇒
aotl66915.pdf
AOTL66915 TM 100V N-Channel AlphaSGT General Description Product Summary VDS Trench Power MOSFET technology 100V Higher in-rush current enabled for faster start-up and ID (at VGS=10V) 339A shorter down time RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOTL66518, AOTL66608, AOTL66610, AOTL66810, AOTL66810Q, AOTL66811, AOTL66912, AOTL66912Q, SPP20N60C3, AOTL66915, AOTL66918, AOTS21115C, AOTS21311C, AOTS21313C, AOTS21319C, AOTS26108, AOTS32334C
Keywords - AOTL66914 MOSFET specs
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