All MOSFET. FQPF5P20 Datasheet

 

FQPF5P20 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQPF5P20

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 38 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 3.4 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO220F

FQPF5P20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQPF5P20 Datasheet (PDF)

1.1. fqpf5p20.pdf Size:610K _fairchild_semi

FQPF5P20
FQPF5P20

May 2000 TM QFET QFET QFET QFET FQPF5P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • -3.4A, -200V, RDS(on) = 1.4? @VGS = -10 V This advanced technology has been especially tailored to • Low gate charge ( typical 10 nC) minimize on-stat

1.2. fqpf5p20rdtu.pdf Size:508K _fairchild_semi

FQPF5P20
FQPF5P20

August 2014 FQPF5P20 P-Channel QFET® MOSFET -200 V, -3.4 A, 1.4 Ω Description Features This P-Channel enhancement mode power MOSFET is • -3.4 A, -200 V, RDS(on) = 1.4 Ω (Max.) @ VGS = -10 V, produced using Fairchild Semiconductor’s proprietary ID = -1.7 A planar stripe and DMOS technology. This advanced • Low Gate Charge (Typ. 10 nC) MOSFET technology has been especially tai

 5.1. fqp5n50c fqpf5n50c.pdf Size:879K _fairchild_semi

FQPF5P20
FQPF5P20

TM QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5A, 500V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to • Fast switchi

5.2. fqpf50n06.pdf Size:630K _fairchild_semi

FQPF5P20
FQPF5P20

May 2001 TM QFET FQPF50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 31A, 60V, RDS(on) = 0.022? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 65 pF) This advanced technology has been especially tailored to • Fast swit

 5.3. fqp5n60c fqpf5n60c.pdf Size:858K _fairchild_semi

FQPF5P20
FQPF5P20

TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 600V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to • Fast swi

5.4. fqpf5n50cf.pdf Size:657K _fairchild_semi

FQPF5P20
FQPF5P20

TM FRFET FQPF5N50CF 500V N-Channel MOSFET Features Description • 5A, 500V, RDS(on) = 1.55 ? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 18nC) DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to mini- • Fast switching m

 5.5. fqpf5n60c.pdf Size:1159K _fairchild_semi

FQPF5P20
FQPF5P20

December 2013 FQP5N60C / FQPF5N60C N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω Description Features This N-Channel enhancement mode power MOSFET is 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, • produced using Fairchild Semiconductor’s proprietary planar ID = 2.25 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 15 nC) technology has been

5.6. fqpf5n90.pdf Size:665K _fairchild_semi

FQPF5P20
FQPF5P20

September 2000 TM QFET QFET QFET QFET FQPF5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.0A, 900V, RDS(on) = 2.3 ? @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 13 pF) This advanced technology has been especiall

5.7. fqpf5n40.pdf Size:728K _fairchild_semi

FQPF5P20
FQPF5P20

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.0A, 400V, RDS(on) = 1.6? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.0 pF) This advanced technology has been especially t

5.8. fqpf5n50c.pdf Size:879K _fairchild_semi

FQPF5P20
FQPF5P20

TM QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to â

Datasheet: FQPF3N80C , FDMS8680 , FQPF45N15V2 , FQPF47P06 , FQPF4N90C , FQPF5N40 , FDD26AN06_F085 , FQPF5N90 , IRFP4232 , FQPF630 , FDMC8296 , FQPF65N06 , FQPF6N80C , FDMS8880 , FQPF6N80T , FDH50N50 , FQPF6N90C .

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