FXN9N90P Specs and Replacement

Type Designator: FXN9N90P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 417 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 3106 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO3P

FXN9N90P substitution

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FXN9N90P datasheet

 ..1. Size:797K  cn fx-semi
 fxn9n90p.pdf pdf_icon

FXN9N90P

FuXin Semiconductor Co., Ltd. FXN9N90P Series Rev.A General Description Features The FXN9N90P uses advanced Silicon s MOSFET Technology, which V = 900V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus... See More ⇒

 7.1. Size:741K  cn fx-semi
 fxn9n90f.pdf pdf_icon

FXN9N90P

FuXin Semiconductor Co., Ltd. FXN9N90F Series Rev.A General Description Features The FXN9N90F uses advanced Silicon s MOSFET Technology, which V = 900V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus... See More ⇒

 9.1. Size:464K  cn fx-semi
 fxn9n50f.pdf pdf_icon

FXN9N90P

FuXin Semiconductor Co., Ltd. FXN9N50F Series Rev.A General Description Features The FXN9N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl... See More ⇒

 9.2. Size:598K  cn fx-semi
 fxn9n20c.pdf pdf_icon

FXN9N90P

FuXin Semiconductor Co., Ltd. FXN9N20C Series Rev.A General Description Features The FXN9N20C uses advanced Silicon s MOSFET Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 9 A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒

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Detailed specifications: FXN0406C, FXN0205C, FXN0206C, FXN0303D, FXN0304C, FXN9N45F, FXN9N50F, FXN9N90F, AO3400A, FXN15S50F, FXN18N20C, FXN18N50F, FXN20N50F, FXN0704F, FXN0706C, FXN0707C, FXN0707CN

Keywords - FXN9N90P MOSFET specs

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