All MOSFET. FXN9N90P Datasheet

 

FXN9N90P Datasheet and Replacement


   Type Designator: FXN9N90P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 3106 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO3P
 

 FXN9N90P substitution

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FXN9N90P Datasheet (PDF)

 ..1. Size:797K  cn fx-semi
fxn9n90p.pdf pdf_icon

FXN9N90P

FuXin Semiconductor Co., Ltd. FXN9N90P Series Rev.A General Description Features The FXN9N90P uses advanced Silicon s MOSFET Technology, which V = 900V DSprovides high performance in on-state resistance, fast switching ID = 9A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 7.1. Size:741K  cn fx-semi
fxn9n90f.pdf pdf_icon

FXN9N90P

FuXin Semiconductor Co., Ltd. FXN9N90F Series Rev.A General Description Features The FXN9N90F uses advanced Silicon s MOSFET Technology, which V = 900V DSprovides high performance in on-state resistance, fast switching ID = 9A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 9.1. Size:464K  cn fx-semi
fxn9n50f.pdf pdf_icon

FXN9N90P

FuXin Semiconductor Co., Ltd.FXN9N50F Series Rev.AGeneral Description FeaturesThe FXN9N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 9A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl

 9.2. Size:598K  cn fx-semi
fxn9n20c.pdf pdf_icon

FXN9N90P

FuXin Semiconductor Co., Ltd. FXN9N20C Series Rev.AGeneral Description Features The FXN9N20C uses advanced Silicon s MOSFET Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 9 A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

Datasheet: FXN0406C , FXN0205C , FXN0206C , FXN0303D , FXN0304C , FXN9N45F , FXN9N50F , FXN9N90F , RU6888R , FXN15S50F , FXN18N20C , FXN18N50F , FXN20N50F , FXN0704F , FXN0706C , FXN0707C , FXN0707CN .

History: HAT2196C | P2610BT | DMN3035LWN | 2SK2267 | SI7619DN | IPB34CN10N | FQD2N50TF

Keywords - FXN9N90P MOSFET datasheet

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