FXN9N90P Datasheet and Replacement
Type Designator: FXN9N90P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 417 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7.4 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 41.5 nC
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 3106 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO3P
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FXN9N90P Datasheet (PDF)
fxn9n90p.pdf
FuXin Semiconductor Co., Ltd. FXN9N90P Series Rev.A General Description Features The FXN9N90P uses advanced Silicon s MOSFET Technology, which V = 900V DSprovides high performance in on-state resistance, fast switching ID = 9A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indus
fxn9n90f.pdf
FuXin Semiconductor Co., Ltd. FXN9N90F Series Rev.A General Description Features The FXN9N90F uses advanced Silicon s MOSFET Technology, which V = 900V DSprovides high performance in on-state resistance, fast switching ID = 9A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indus
fxn9n50f.pdf
FuXin Semiconductor Co., Ltd.FXN9N50F Series Rev.AGeneral Description FeaturesThe FXN9N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 9A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl
fxn9n20c.pdf
FuXin Semiconductor Co., Ltd. FXN9N20C Series Rev.AGeneral Description Features The FXN9N20C uses advanced Silicon s MOSFET Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 9 A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
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