All MOSFET. FQPF65N06 Datasheet

 

FQPF65N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQPF65N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 56 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: TO220F

FQPF65N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQPF65N06 Datasheet (PDF)

1.1. fqpf65n06.pdf Size:681K _fairchild_semi

FQPF65N06
FQPF65N06

May 2001 TM QFET FQPF65N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 40A, 60V, RDS(on) = 0.016 ? @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 48 nC) planar stripe, DMOS technology. • Low Crss ( typical 100 pF) This advanced technology has been especially tailored to • Fast s

5.1. fqp6n60c fqpf6n60c.pdf Size:931K _fairchild_semi

FQPF65N06
FQPF65N06

® QFET FQP6N60C/FQPF6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 600V, RDS(on) = 2.0? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 7 pF) This advanced technology has been especially tailored to • Fast switch

5.2. fqp6n40c fqpf6n40c.pdf Size:851K _fairchild_semi

FQPF65N06
FQPF65N06

TM QFET FQP6N40C/FQPF6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6A, 400V, RDS(on) = 1.0 ? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to • Fast switchi

5.3. fqpf6n80t.pdf Size:1001K _fairchild_semi

FQPF65N06
FQPF65N06

TM QFET FQPF6N80T 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.3A, 800V, RDS(on) = 1.95? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 14 pF) This advanced technology has been especially tailored to • Fast switching

5.4. fqpf630.pdf Size:765K _fairchild_semi

FQPF65N06
FQPF65N06

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 6.3A, 200V, RDS(on) = 0.4? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has been especially tail

5.5. fqp6n40cf fqpf6n40cf.pdf Size:1088K _fairchild_semi

FQPF65N06
FQPF65N06

February 2006 TM FRFET FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS(on) = 1.1 ? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 16nC) stripe, DMOS technology. This advanced technology has been especially tailored to • Low Crss ( typical 15pF) mi

5.6. fqp6n80c fqpf6n80c.pdf Size:889K _fairchild_semi

FQPF65N06
FQPF65N06

TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 800V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 21 nC) planar stripe, DMOS technology. • Low Crss ( typical 8 pF) This advanced technology has been especially tailored to • Fast switc

5.7. fqp6n90c fqpf6n90c.pdf Size:860K _fairchild_semi

FQPF65N06
FQPF65N06

TM QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6A, 900V, RDS(on) = 2.3? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 30 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailored to • Fast switch

Datasheet: FQPF47P06 , FQPF4N90C , FQPF5N40 , FDD26AN06_F085 , FQPF5N90 , FQPF5P20 , FQPF630 , FDMC8296 , IRFB4227 , FQPF6N80C , FDMS8880 , FQPF6N80T , FDH50N50 , FQPF6N90C , FQPF70N10 , FDH45N50F , FQPF7N60 .

 


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