FXN0707CN Specs and Replacement

Type Designator: FXN0707CN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 63.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 272 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220

FXN0707CN substitution

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FXN0707CN datasheet

 ..1. Size:938K  cn fx-semi
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FXN0707CN

FuXin Semiconductor Co., Ltd. FXN0707CN Series Rev.A General Description Features The FXN0707CN uses advanced Silicon s MOSFET Technology, which VDS = 75V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appli... See More ⇒

 6.1. Size:315K  cn fx-semi
 fxn0707c.pdf pdf_icon

FXN0707CN

FuXin Semiconductor Co., Ltd. FXN0707C Series Rev.A General Description Features The FXN0707C uses advanced Silicon s MOSFET Technology, which VDS = 70V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri... See More ⇒

 8.1. Size:296K  cn fx-semi
 fxn0703d.pdf pdf_icon

FXN0707CN

FuXin Semiconductor Co., Ltd. FXN0703D Series Rev.A General Description Features The FXN0703D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒

 8.2. Size:317K  cn fx-semi
 fxn0706c.pdf pdf_icon

FXN0707CN

FuXin Semiconductor Co., Ltd. FXN0706C Series Rev.A General Description Features The FXN0706C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri... See More ⇒

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Detailed specifications: FXN9N90P, FXN15S50F, FXN18N20C, FXN18N50F, FXN20N50F, FXN0704F, FXN0706C, FXN0707C, IRLB3034, FXN4613F, FXN4615F, FXN4620F, FXN4625F, FXN7N65F, FXN8N60F, FXN8N65D, FXN8N65F

Keywords - FXN0707CN MOSFET specs

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