FXN4615F Specs and Replacement

Type Designator: FXN4615F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 460 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12.4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm

Package: TO220F

FXN4615F substitution

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FXN4615F datasheet

 ..1. Size:1122K  cn fx-semi
fxn4615f.pdf pdf_icon

FXN4615F

FuXin Semiconductor Co., Ltd. FXN4615F Series Rev.A General Description Features The FXN4615F uses advanced Silicon s MOSFET T echnology, which V = 460V DS provides high performance in on-state resistance, fast switching ID = 15A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in in... See More ⇒

 8.1. Size:1500K  cn fx-semi
fxn4613f.pdf pdf_icon

FXN4615F

FuXin Semiconductor Co., Ltd. FXN4613F Series Rev.A General Description Features The FXN4613F uses advanced Silicon s MOSFET T echnology, which V = 460V DS provides high performance in on-state resistance, fast switching ID = 13A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in i... See More ⇒

 8.2. Size:1085K  cn fx-semi
fxn4611f.pdf pdf_icon

FXN4615F

FuXin Semiconductor Co., Ltd. FXN4611F Series Rev.A General Description Features The FXN4611F uses advanced Silicon s MOSFET Technology, which V = 450V DS provides high performance in on-state resistance, fast switching ID = 11A @V =10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus... See More ⇒

 9.1. Size:600K  cn fx-semi
fxn4609f.pdf pdf_icon

FXN4615F

FuXin Semiconductor Co., Ltd. FXN4609F Series Rev.A General Description Features The FXN4609F uses advanced Silicon s MOSFET Technology, which V = 460V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl... See More ⇒

Detailed specifications: FXN18N20C, FXN18N50F, FXN20N50F, FXN0704F, FXN0706C, FXN0707C, FXN0707CN, FXN4613F, IRFB7545, FXN4620F, FXN4625F, FXN7N65F, FXN8N60F, FXN8N65D, FXN8N65F, FXN10N06D, FXN10N50F

Keywords - FXN4615F MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.