FXN8N60F Specs and Replacement
Type Designator: FXN8N60F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.3 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 152 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO220F
FXN8N60F substitution
- MOSFET ⓘ Cross-Reference Search
FXN8N60F datasheet
fxn8n60f.pdf
FuXin Semiconductor Co., Ltd. FXN8N60F Series Rev.A General Description Features The FXN8N60F uses advanced Silicon s MOSFET Technology, which V = 600V DS provides high performance in on-state resistance, fast switching ID = 8A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl... See More ⇒
fxn8n65d.pdf
FuXin Semiconductor Co., Ltd. FXN8N65D Series Rev.A General Description Features The FXN8N65D uses advanced Silicon s MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 8A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒
fxn8n65f.pdf
1 FuXin Semiconductor Co., Ltd. Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250 A, VGS = 0V 650 - - V Gate Threshold Voltage VGS(th) 2.0 3.0 4.0 VDS = VGS, ID = 250 A Drain Cut-Off Current IDSS VDS = 650V, VGS = 0V - - 1 A Ga... See More ⇒
Detailed specifications: FXN0706C, FXN0707C, FXN0707CN, FXN4613F, FXN4615F, FXN4620F, FXN4625F, FXN7N65F, RU7088R, FXN8N65D, FXN8N65F, FXN10N06D, FXN10N50F, FXN10N65F, FXN10N80F, FXN5N65D, FXN5N65F
Keywords - FXN8N60F MOSFET specs
FXN8N60F cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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