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FXN10N06D Specs and Replacement


   Type Designator: FXN10N06D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 43 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 276 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO252
 

 FXN10N06D substitution

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FXN10N06D Specs

 ..1. Size:858K  cn fx-semi
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FXN10N06D

FuXin Semiconductor Co., Ltd. FXN10N06D Series Rev.A General Description Features The FXN10N06D uses advanced Silicon s MOSFET Technology, which VDS = 60V provides high performance in on-state resistance, fast switching ID = 52A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri... See More ⇒

 8.1. Size:960K  cn fx-semi
 fxn10n50f.pdf pdf_icon

FXN10N06D

FuXin Semiconductor Co., Ltd. FXN10N50F Series Rev.A General Description Features The 10N50Fuses advanced Silicon s MOSFET T echnology, which FXN VDS = 500V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust... See More ⇒

 8.2. Size:734K  cn fx-semi
 fxn10n65f.pdf pdf_icon

FXN10N06D

FuXin Semiconductor Co., Ltd. FXN10N65F Series Rev.A General Description Features The FXN10N65F uses advanced Silicon s MOSFET Technology, which V = 650V DS provides high performance in on-state resistance, fast switching ID = 10A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in in... See More ⇒

 8.3. Size:478K  cn fx-semi
 fxn10n80f.pdf pdf_icon

FXN10N06D

FuXin Semiconductor Co., Ltd. FXN10N80F Series Rev.A General Description Features The FXN10N80F uses advanced Silicon s MOSFET Technology, which V = 800V DS provides high performance in on-state resistance, fast switching ID = 10A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial a... See More ⇒

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Detailed specifications: FXN4613F , FXN4615F , FXN4620F , FXN4625F , FXN7N65F , FXN8N60F , FXN8N65D , FXN8N65F , AO4407A , FXN10N50F , FXN10N65F , FXN10N80F , FXN5N65D , FXN5N65F , FXN5N65FM , FXN65S55T , FXN07N10NS .

History: IRFTS9342

Keywords - FXN10N06D MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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