FXN5N65F MOSFET. Datasheet pdf. Equivalent
Type Designator: FXN5N65F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.7 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 8.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO220F
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FXN5N65F Datasheet (PDF)
fxn5n65f.pdf
FXN5N65F Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 660 - - V Gate Threshold Voltage VGS(th) - 2.0 4.0 VDS = VGS, ID = 250A Drain Cut-Off Current IDSS VDS = 650V, VGS = 0V 1.0 - - A VGS = 30V, VDS = 0V - 0.1 Gate Leakage Current
fxn5n65fm.pdf
FuXin Semiconductor Co., Ltd.Rev.AFXN5N65FMFeaturesGeneral DescriptionVDS = 650VThe FXN5N65FM uses advanced Silicons MOSFET Technology,which provides high performance in on-state resistance, ID = 5A @VGS = 10Vfast switching performance, and excellent quality. Very low on-resistanceRDS(ON)
fxn5n65d.pdf
FuXin Semiconductor Co., Ltd. FXN5N65D Series Rev.A General Description Features The FXN5N65D uses advanced Silicon s MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 5A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
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