FXN5N65F Datasheet and Replacement. Cross Reference Search

FXN5N65F Datasheet (PDF)

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FXN5N65F Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 660 - - V Gate Threshold Voltage VGS(th) - 2.0 4.0 VDS = VGS, ID = 250A Drain Cut-Off Current IDSS VDS = 650V, VGS = 0V 1.0 - - A VGS = 30V, VDS = 0V - 0.1 Gate Leakage Current

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FuXin Semiconductor Co., Ltd.Rev.AFXN5N65FMFeaturesGeneral DescriptionVDS = 650VThe FXN5N65FM uses advanced Silicons MOSFET Technology,which provides high performance in on-state resistance, ID = 5A @VGS = 10Vfast switching performance, and excellent quality. Very low on-resistanceRDS(ON)

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FuXin Semiconductor Co., Ltd. FXN5N65D Series Rev.A General Description Features The FXN5N65D uses advanced Silicon s MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 5A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

Datasheet: FXN8N60F , FXN8N65D , FXN8N65F , FXN10N06D , FXN10N50F , FXN10N65F , FXN10N80F , FXN5N65D , IRFZ44N , FXN5N65FM , FXN65S55T , FXN07N10NS , FXN0808C , FXN08S65D , FXN09150C , FXN4607F , FXN4609F .