FXN5N65FM Datasheet and Replacement
Type Designator: FXN5N65FM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 8.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO220F
FXN5N65FM substitution
FXN5N65FM Datasheet (PDF)
fxn5n65fm.pdf

FuXin Semiconductor Co., Ltd.Rev.AFXN5N65FMFeaturesGeneral DescriptionVDS = 650VThe FXN5N65FM uses advanced Silicons MOSFET Technology,which provides high performance in on-state resistance, ID = 5A @VGS = 10Vfast switching performance, and excellent quality. Very low on-resistanceRDS(ON)
fxn5n65f.pdf

FXN5N65F Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 660 - - V Gate Threshold Voltage VGS(th) - 2.0 4.0 VDS = VGS, ID = 250A Drain Cut-Off Current IDSS VDS = 650V, VGS = 0V 1.0 - - A VGS = 30V, VDS = 0V - 0.1 Gate Leakage Current
fxn5n65d.pdf

FuXin Semiconductor Co., Ltd. FXN5N65D Series Rev.A General Description Features The FXN5N65D uses advanced Silicon s MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 5A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
Datasheet: FXN8N65D , FXN8N65F , FXN10N06D , FXN10N50F , FXN10N65F , FXN10N80F , FXN5N65D , FXN5N65F , IRF3205 , FXN65S55T , FXN07N10NS , FXN0808C , FXN08S65D , FXN09150C , FXN4607F , FXN4609F , FXN4611F .
History: BUK110-50GL | FXN08S65D | IRF9641 | APT1004RKN | FQN1N60CBU | IPN80R750P7 | R6530KNX
Keywords - FXN5N65FM MOSFET datasheet
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History: BUK110-50GL | FXN08S65D | IRF9641 | APT1004RKN | FQN1N60CBU | IPN80R750P7 | R6530KNX



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