FQPF6N80T Datasheet and Replacement. Cross Reference Search

FQPF6N80T Datasheet (PDF)

..1. Size:1001K fairchild semi
fqpf6n80t.pdf pdf_icon

TM QFETFQPF6N80T800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 800V, RDS(on) = 1.95 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailored to

..2. Size:549K onsemi
fqpf6n80t.pdf pdf_icon

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

6.1. Size:664K fairchild semi
fqpf6n80.pdf pdf_icon

September 2000TMQFETFQPF6N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 800V, RDS(on) = 1.95 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tail

6.2. Size:889K fairchild semi
fqp6n80c fqpf6n80c.pdf pdf_icon

TMQFETFQP6N80C/FQPF6N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 8 pF)This advanced technology has been especially tailored to