FQPF6N80T PDF and Equivalents Search

 

FQPF6N80T Specs and Replacement

Type Designator: FQPF6N80T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 51 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.95 Ohm

Package: TO220F

FQPF6N80T substitution

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FQPF6N80T datasheet

 ..1. Size:1001K  fairchild semi
 fqpf6n80t.pdf pdf_icon

FQPF6N80T

TM QFET FQPF6N80T 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to ... See More ⇒

 ..2. Size:549K  onsemi
 fqpf6n80t.pdf pdf_icon

FQPF6N80T

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 6.1. Size:664K  fairchild semi
 fqpf6n80.pdf pdf_icon

FQPF6N80T

September 2000 TM QFET FQPF6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tail... See More ⇒

 6.2. Size:889K  fairchild semi
 fqp6n80c fqpf6n80c.pdf pdf_icon

FQPF6N80T

TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 8 pF) This advanced technology has been especially tailored to ... See More ⇒

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Detailed specifications: FDD26AN06F085 , FQPF5N90 , FQPF5P20 , FQPF630 , FDMC8296 , FQPF65N06 , FQPF6N80C , FDMS8880 , IRF1407 , FDH50N50 , FQPF6N90C , FQPF70N10 , FDH45N50F , FQPF7N60 , FDN5632NF085 , FQPF7N65C , FQPF7N80C .

Keywords - FQPF6N80T MOSFET specs

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