FXN12N60FS MOSFET. Datasheet pdf. Equivalent
Type Designator: FXN12N60FS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 9.6 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 49 nC
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 148 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO220F
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FXN12N60FS Datasheet (PDF)
fxn12n60fs.pdf
FuXin Semiconductor Co., Ltd. FXN12N60FS Series Rev.AGeneral Description Features The FXN12N60FS uses advanced Silicon s MOSFET Technology, which V = 600V DSprovides high performance in on-state resistance, fast switching ID = 12A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in i
fxn12n65f.pdf
FuXin Semiconductor Co., Ltd. FXN12N65F Series Rev.AGeneral Description Features The FXN12N65F uses advanced Silicon s MOSFET Technology, which V = 650V DSprovides high performance in on-state resistance, fast switching ID = 12A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in ind
fxn12s65f.pdf
FuXin Semiconductor Co., Ltd. FXN12S65F Series Rev.AGeneral Description Features The FXN12S65F uses advanced Cool MOSFET Technology, which V = 650V DSprovides high performance in on-state resistance, fast switching ID = 12A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial ap
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